高丽茵
高丽茵
个人简介

博士,副研究员,硕士生导师,2017年毕业于中国科学院金属研究所,获材料学博士学位,累计发表SCI/EI论文50余篇(第一作者或通讯作者SCI/EI论文32篇),申请发明专利22件(其中8件已获授权,包括1项美国专利)。参与及承担国自然青年基金、广东省粤深青年基金、广东省面上基金、1 国家自然科学基金重大研究计划重点支持项目、广东省重点领域研发计划、广东省粤深重点项目、装备发展部预研、深圳市科技重大专项等科研项目20余项。

研究领域

微电子封装材料研发及可靠性评价

代表论著

(1)Ke-Xin Chen, Li-Yin Gao*, Zhi-Chao Meng, Zhi-Quan Liu ⃰, Modulation on the twinning microstructure of Cu nanowires and its effect on oxidation behavior, Chemical Engineering Journal, Volume 496, 2024, 154308.

(2)Xiao Lu, Liang Zhang*, Yong-Huan Guo, Li-Yin Gao*, Xi Wang, Chen Chen, Zhi-Quan Liu, Study on the dual inhibition behavior of interfacial IMCs in Cu/SAC105/Cu joint by adopting SiC nanowires and nanocrystalline Cu substrate, Journal of Materials Research and Technology, Volume 25, 2023, 3754-3767.

(3)L.Y. Gao, Y.X. Luo, Peng Wan, Z.Q. Liu, Theoretical and experimental investigations on mechanical properties of (Fe,Ni)Sn2 intermetallic compounds formed in SnAgCu/Fe-Ni solder joints, Materials Characterization, Volume 178, 2021, 111195.

(4)L.Y. Gao, C.F. Li, P. Wan, H. Zhang, Z.Q. Liu*, The diffusion barrier effect of Fe-Ni UBM as compared to the commercial Cu UBM during high temperature storage, J. Alloy. Compd., 2018, 739:632-642.

(5)L.Y. Gao, H. Zhang, C.F. Li, J.D. Guo, Z.Q. Liu*, Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package, J. Mater. Sci. Technol., 2018, 34(8):1305-1314.

科研\学术成果